J–V characteristics of dark current in truncated conical quantum dot infrared photodetectors (QDIPs)

Abstract Quantum Dot Infrared Photodetector (QDIP) is one of the promising candidates for infrared photodetection due to its controllable heterojunction bandgap and sensitivity normal incident radiation. It expected be superior photodetectors mature technologies such as Mercury Cadmium Telluride (HgCdTe) or a quantum well photodetector. In presented paper, we have developed theoretical model dark current in truncated conical QDIP shaped QD structure more appropriate describe fabricated dots. The based on drift diffusion solving main governing Poisson’s continuity equations. this model, carrier mobility calculated by time-dependent Boltzmann transport equation photodetector material with embedded QDs using finite difference technique. results been compared characteristics published experimental Indium Arsenide/Gallium Arsenide (InAs/GaAs) QDIP. effects volume, aspect ratio density operating temperature also investigated.